BS250 P-channel enhancement mode vertical D-MOS transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BS250 P-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconductor.
P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.

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Datasheet Specifications

Part number: BS250
Manufacturer: NXP ↗
File Size: 50.00 KB
Datasheet: BS250_PhilipsSemiconductors.pdf
Description: P-channel enhancement mode vertical D-MOS transistor

Features

* Low RDS(on)
* Direct interface to C-MOS
* High-speed switching
* No second breakdown PINNING - TO-92 VARIANT 1 2 3 = source = gate = drain QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tam

Applications

* BS250 This data sheet contains target or goal speciﬁcations for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains ﬁnal product speciﬁcations. These products are not designed for use in life support appliances, devic

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BS250 P-channel enhancement mode vertical D-MOS transistor NXP

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