BS250F Datasheet - Zetex Semiconductors

BS250F P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 BS250F D G S PARTMARKING DETAIL MX ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -45 -90 -1.6 ± 20 SOT23 UNIT V mA A V mW °C 330 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAME.

BS250F_ZetexSemiconductors.pdf