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BSH105

N-channel enhancement mode MOS transistor

BSH105 Features

* Very low threshold voltage

* Fast switching

* Logic level compatible

* Subminiature surface mount package BSH105 SYMBOL d QUICK REFERENCE DATA VDS = 20 V ID = 1.05 A g RDS(ON) ≤ 250 mΩ (VGS = 2.5 V) VGS(TO) ≥ 0.4 V s GENERAL DESCRIPTION N-channel, enhancement m

BSH105 General Description

N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH105 is supplied in the SOT23 subminiature surface mounting pack.

BSH105 Datasheet (145.64 KB)

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Preview of BSH105 PDF

Datasheet Details

Part number:

BSH105

Manufacturer:

NXP ↗

File Size:

145.64 KB

Description:

N-channel enhancement mode mos transistor.

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Stock and price

Distributor
Bimba Manufacturing Company
BRTM-1726-DBT2
Cylinder, O.L., Block Rear Trunnion with Magnet BRTM; 1-1/2In Bore; Stroke: 26I
RS
0 In Stock
Qty : 1 units
Unit Price : $265.52

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BSH105 N-channel enhancement mode MOS transistor NXP

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