BSP100
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N-channel enhancement mode trenchmos transistor. N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:
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📁 Related Datasheet
BSP100 - N-channel enhancement mode TrenchMOS transistor
(NXP)
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOS™ transistor
FEATURES
• ’Trench’ technology • Low on-state resistan.
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BSP110 - N-channel enhancement mode vertical D-MOS transistor
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BSP120 - N-channel enhancement mode vertical D-MOS transistor
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BSP121 - N-channel enhancement mode vertical D-MOS transistor
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BSP121 N-channel enhancement mode vertical D-MOS transistor
Product specification Supersedes data of April 1995 Fi.
BSP122 - N-channel enhancement mode vertical D-MOS transistor
(NXP)
DISCRETE SEMICONDUCTORS
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BSP122 - N-Channel MOSFET
(VBsemi)
BSP122-VB
BSP122-VB Datasheet N-Channel 200 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200
.
BSP123 - N-Channel MOSFET
(VBsemi)
BSP123-VB
BSP123-VB Datasheet
N-Channel 100-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.100 at VGS = 10 V 100
0.120 at V.