BSP130 N-channel enhancement mode vertical D-MOS transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BSP130 N-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconducto.
N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for ap.

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Datasheet Specifications

Part number: BSP130
Manufacturer: NXP ↗
File Size: 88.93 KB
Datasheet: BSP130_PhilipsSemiconductors.pdf
Description: N-channel enhancement mode vertical D-MOS transistor

Features

* Direct interface to C-MOS, TTL, etc.
* High-speed switching

Applications

* in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain 1 Top view 2 3 MAM054 BSP130 QUICK REFERENCE DATA SYMBOL VDS ID Ptot ±VGSO RDS(on) VGS(off) PARAMETER drain-source voltage DC drain current total power dissipation drain-source on-resistance gat

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BSP130 N-channel enhancement mode vertical D-MOS transistor NXP

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