BUK438W-800A PowerMOS transistor

NXP

Description

Philips Semiconductors Product specification PowerMOS transistor BUK438W-800A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.

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Datasheet Specifications

Part number: BUK438W-800A
Manufacturer: NXP ↗
File Size: 65.31 KB
Datasheet: BUK438W-800A_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK438 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -800A 800 7.6 220 1.5 MAX. -800B 800 6.6 220 2.0 UNIT V A W Ω PINNING - SOT429 (TO247) PIN 1 2 3 tab gate drain source drain DESCR

BUK438W-800A Distributors

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BUK438W-800A PowerMOS transistor NXP

NXP BUK438W-800A-like datasheet