Datasheet Details
- Part number
- BUK438W-800B
- Manufacturer
- NXP ↗
- File Size
- 65.31 KB
- Datasheet
- BUK438W-800B_PhilipsSemiconductors.pdf
- Description
- PowerMOS transistor
BUK438W-800B Description
Philips Semiconductors Product specification PowerMOS transistor BUK438W-800A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.
BUK438W-800B Applications
* QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK438 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -800A 800 7.6 220 1.5 MAX. -800B 800 6.6 220 2.0 UNIT V A W Ω
PINNING - SOT429 (TO247)
PIN 1 2 3 tab gate drain source drain DESCR
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