BUK438W-800B Datasheet - NXP

BUK438W-800B, PowerMOS transistor

Philips Semiconductors Product specification PowerMOS transistor BUK438W-800A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.

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BUK438W-800B_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

BUK438W-800B

Manufacturer:

NXP ↗

File Size:

65.31 KB

Description:

PowerMOS transistor

Applications

* QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK438 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -800A 800 7.6 220 1.5 MAX. -800B 800 6.6 220 2.0 UNIT V A W Ω PINNING - SOT429 (TO247) PIN 1 2 3 tab gate drain source drain DESCR

BUK438W-800B Distributors

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BUK438W-800B PowerMOS transistor NXP

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