BUK463-60B PowerMOS transistor

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.

📥 Download Datasheet

BUK463-60B Datasheet Preview — Preview of BUK463-60B PDF

Datasheet Specifications

Part number: BUK463-60B
Manufacturer: NXP ↗
File Size: 73.26 KB
Datasheet: BUK463-60B_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK463 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -60A 60 22 75 175 0.08 MAX. -60B 60 20 75 175 0.10 UNIT V A W ˚C Ω PINNING - SOT404 PIN 1 2 3 mb gate drai

BUK463-60B Distributors

📁 Related Datasheet

BUK436-100A BUK436-100B BUK436-200A BUK436-200B BUK436-60A BUK436-60B

📌 All Tags

BUK463-60B PowerMOS transistor NXP

NXP BUK463-60B-like datasheet