BUK464-60H PowerMOS transistor

NXP

Description

Philips Semiconductors Product specification PowerMOS transistor BUK464-60H GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

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Datasheet Specifications

Part number: BUK464-60H
Manufacturer: NXP ↗
File Size: 54.70 KB
Datasheet: BUK464-60H_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. 60 41 125 175 38 UNIT V A

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📁 Related Datasheet

BUK436-100A BUK436-100B BUK436-200A BUK436-200B BUK436-60A BUK436-60B

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BUK464-60H PowerMOS transistor NXP

NXP BUK464-60H-like datasheet