BUK475-100A PowerMOS transistor

NXP

Description

Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-100A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

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Datasheet Specifications

Part number: BUK475-100A
Manufacturer: NXP ↗
File Size: 72.90 KB
Datasheet: BUK475-100A_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* BUK475-100A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK475 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -100A 100 14 30 150 0.08 MAX. -100B 100 12 30 150 0.1 UNIT V A W ˚C Ω PINNING - SOT186A PIN

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📁 Related Datasheet

BUK436-100A BUK436-100B BUK436-200A BUK436-200B BUK436-60A BUK436-60B

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BUK475-100A PowerMOS transistor NXP

NXP BUK475-100A-like datasheet