BUK475-200A PowerMOS transistor

NXP

Description

Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-200A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

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Datasheet Specifications

Part number: BUK475-200A
Manufacturer: NXP ↗
File Size: 58.14 KB
Datasheet: BUK475-200A_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* BUK475-200A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK475 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -200A 200 7.6 30 150 0.23 MAX. -200B 200 7 30 150 0.28 UNIT V A W ˚C Ω PINNING - SOT186A PI

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📁 Related Datasheet

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BUK475-200A PowerMOS transistor NXP

NXP BUK475-200A-like datasheet