BUK475-60A PowerMOS transistor

NXP

Description

Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-60A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

📥 Download Datasheet

BUK475-60A Datasheet Preview — Preview of BUK475-60A PDF

Datasheet Specifications

Part number: BUK475-60A
Manufacturer: NXP ↗
File Size: 59.64 KB
Datasheet: BUK475-60A_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* BUK475-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK475 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -60A 60 21 30 150 0.038 MAX. -60B 60 20 30 150 0.045 UNIT V A W ˚C Ω PINNING - SOT186A PIN 1

BUK475-60A Distributors

📁 Related Datasheet

BUK436-100A BUK436-100B BUK436-200A BUK436-200B BUK436-60A BUK436-60B

📌 All Tags

BUK475-60A PowerMOS transistor NXP

NXP BUK475-60A-like datasheet