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BUK542-100A PowerMOS transistor

BUK542-100A Description

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

BUK542-100A Applications

* BUK542-100A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK542 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance; VGS = 5 V MAX. -100A 100 6.3 22 0.28 MAX. -100B 100 5.6 22 0.35 UNIT V A W Ω PINNING - SOT186 PIN 1 2 3 gate drain sour

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