BUK542-60A Datasheet - NXP

BUK542-60A, PowerMOS transistor

Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

Applications

* BUK542-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK542 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance; VGS = 5 V MAX. -60A 60 9.2 22 0.15 MAX. -60B 60 8.4 22 0.18 UNIT V A W Ω PINNING - SOT186 PIN 1 2 3 gate drain source DE

BUK542-60A_PhilipsSemiconductors.pdf