BUK542-100B PowerMOS transistor

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

📥 Download Datasheet

BUK542-100B Datasheet Preview — Preview of BUK542-100B PDF

Datasheet Specifications

Part number: BUK542-100B
Manufacturer: NXP ↗
File Size: 58.45 KB
Datasheet: BUK542-100B_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* BUK542-100A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK542 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance; VGS = 5 V MAX. -100A 100 6.3 22 0.28 MAX. -100B 100 5.6 22 0.35 UNIT V A W Ω PINNING - SOT186 PIN 1 2 3 gate drain sour

BUK542-100B Distributors

📁 Related Datasheet

BUK555-100A BUK555-100B BUK118-50DL BUK127-50GT BUK138-50DL BUK139-50DL

📌 All Tags

BUK542-100B PowerMOS transistor NXP

NXP BUK542-100B-like datasheet