BUK542-100B Datasheet - NXP

BUK542-100B, PowerMOS transistor

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

Applications

* BUK542-100A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK542 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance; VGS = 5 V MAX. -100A 100 6.3 22 0.28 MAX. -100B 100 5.6 22 0.35 UNIT V A W Ω PINNING - SOT186 PIN 1 2 3 gate drain sour

BUK542-100B_PhilipsSemiconductors.pdf