BUK545-200B Datasheet - NXP

BUK545-200B, PowerMOS transistor

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

Applications

* BUK545-200A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK545 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -200A 200 7.6 30 150 0.23 MAX. -200B 200 7 30 150 0.28 UNIT V A W ˚C Ω PINNING -

BUK545-200B_PhilipsSemiconductors.pdf