BUK545-60A PowerMOS transistor

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

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Datasheet Specifications

Part number: BUK545-60A
Manufacturer: NXP ↗
File Size: 57.82 KB
Datasheet: BUK545-60A_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* BUK545-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK545 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -60A 60 20 30 150 0.042 MAX. -60B 60 18 30 150 0.055 UNIT V A W ˚C Ω PINNING - SO

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BUK545-60A PowerMOS transistor NXP

NXP BUK545-60A-like datasheet