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BUK662R5-30C - N-channel TrenchMOS intermediate level FET

BUK662R5-30C Description

BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev.2 * 14 October 2010 Product data sheet 1.Product profile 1.1 General descri.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

BUK662R5-30C Features

* AEC Q101 compliant
* Suitable for intermediate level gate drive sources

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Datasheet Details

Part number
BUK662R5-30C
Manufacturer
NXP ↗
File Size
172.90 KB
Datasheet
BUK662R5-30C-NXP.pdf
Description
N-channel TrenchMOS intermediate level FET

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N-channel TrenchMOS intermediate level FET NXP
NXP BUK662R5-30C-like datasheet