BUK9508-55B Datasheet PDF - NXP N-channel TrenchMOS logic level FET Specs

BUK9508-55B - N-channel TrenchMOS logic level FET

Datasheet Summary

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

Low conduction losses due to low on-state resistance.
Q101 compliant 1.3.

Datasheet Details

Part number	BUK9508-55B
Manufacturer	NXP
File Size	306.56 KB
Description	N-channel TrenchMOS logic level FET
Datasheet	BUK9508-55B Datasheet
Additional preview pages of the BUK9508-55B datasheet.

📁 Similar Datasheet

BUK9508-55A - transistor Logic level FET (Philips)

BUK9506-40B - N-Channel MOSFET (NXP Semiconductors)

BUK9506-55A - TrenchMOS logic level FET (NXP Semiconductors)

BUK9506-75B - N-channel TrenchMOS logic level FET (NXP Semiconductors)

BUK9511-55A - N-Channel MOSFET (NXP Semiconductors)

BUK9514-55A - N-Channel MOSFET (NXP Semiconductors)

BUK9515-60E - N-Channel MOSFET (NXP Semiconductors)

BUK9516-55A - N-Channel MOSFET (NXP Semiconductors)

BUK9516-75B - N-channel TrenchMOS logic level FET (NXP Semiconductors)

BUK9518-55A - N-Channel MOSFET (NXP Semiconductors)

Full PDF Text Transcription

Click to expand full text

BUK9508-55B N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant 1.3 Applications  12 V and 24 V loads  Automotive systems 1.4 Quick reference data Table 1. VDS ID Symbol Parameter ww re .nu at an e ce.

Published: Jun 7, 2014 |