BUW14 Silicon Diffused Power Transistor

NXP

Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUW14 GENERAL .
High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, m.

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Datasheet Specifications

Part number: BUW14
Manufacturer: NXP ↗
File Size: 63.17 KB
Datasheet: BUW14_PhilipsSemiconductors.pdf
Description: Silicon Diffused Power Transistor

Applications

* QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Fall time CONDITIONS VBE = 0 V TYP. 0.4 MAX. 1000 450 0.5 1 20 UNIT V V A A W µs T

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BUW14 Silicon Diffused Power Transistor NXP

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