MMRF1022HS Datasheet - NXP

MMRF1022HS RF Power LDMOS Transistor

Freescale Semiconductor Technical Data Document Number: MMRF1022HS Rev. 0, 4/2016 RF Power LDMOS Transistor N Channel Enhancement Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is optimized for instantaneous signal bandwidth capabilities covering the frequency range of 2110 to 2170 MHz. This part is ideally suited for commercial and defense communications and electronic warfare applications, such as an IED jammer. 2100 MHz Typical Doher.

MMRF1022HS Features

* Advanced high performance in

* package Doherty

* Greater negative gate

* source voltage range for improved Class C operation

* Designed for digital predistortion error correction systems MMRF1022HS 2110

* 2170 MHz, 63 W AVG., 28 V AIRFAST RF POWER LDMOS T

MMRF1022HS Datasheet (429.06 KB)