MMRF1022HS Datasheet - NXP

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MMRF1022HS RF Power LDMOS Transistor

Freescale Semiconductor Technical Data Document Number: MMRF1022HS Rev.0, 4/2016 RF Power LDMOS Transistor N *Channel Enhancement *Mo.

MMRF1022HS-NXP.pdf

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Datasheet Details

Part number:

MMRF1022HS

Manufacturer:

NXP ↗

File Size:

429.06 KB

Description:

RF Power LDMOS Transistor

Features

* Advanced high performance in
* package Doherty
* Greater negative gate
* source voltage range for improved Class C operation
* Designed for digital predistortion error correction systems MMRF1022HS 2110
* 2170 MHz, 63 W AVG. , 28 V AIRFAST RF POWER LDMOS T

Applications

* such as an IED jammer. 2100 MHz
* Typical Doherty Single
* Carrier W
* CDMA Performance: VDD = 28 Vdc, IDQA = 500 mA, VGSB = 0.5 Vdc, Pout = 63 W Avg. , Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD Output PAR ACPR (%) (dB) (dBc) 2110 MHz

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