MMRF5018HS Datasheet - NXP

MMRF5018HS RF Power GaN Transistor

MMRF5018HS RF Power GaN Transistor Rev. 0 July 2022 This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications. This part is characterized and performance is guaranteed for applications operating in the 1 2700 MHz band. There is no guarantee of performance when this part is use.

MMRF5018HS Features

* Advanced GaN on SiC, offering high power density

* Decade bandwidth performance

* Enhanced thermal resistance packaging

* Input matched for extended wideband performance

* High ruggedness: > 20:1 VSWR Typical Applications

* Ideal for military end

MMRF5018HS-NXP.pdf