MMRF5018HS Datasheet - NXP

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MMRF5018HS RF Power GaN Transistor

MMRF5018HS RF Power GaN Transistor Rev.0 * July 2022 This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz an.

MMRF5018HS-NXP.pdf

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Datasheet Details

Part number:

MMRF5018HS

Manufacturer:

NXP ↗

File Size:

197.19 KB

Description:

RF Power GaN Transistor

Features

* Advanced GaN on SiC, offering high power density
* Decade bandwidth performance
* Enhanced thermal resistance packaging
* Input matched for extended wideband performance

Applications

* This part is characterized and performance is guaranteed for applications operating in the 1
* 2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. Typical 450
* 2700 MHz Performance: VDD = 50 Vdc, TA = 25°C,

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