MMRF5018HS RF Power GaN Transistor

NXP

Description

MMRF5018HS RF Power GaN Transistor Rev.0 * July 2022 This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz an.

📥 Download Datasheet

MMRF5018HS Datasheet Preview — Preview of MMRF5018HS PDF

Datasheet Specifications

Part number: MMRF5018HS
Manufacturer: NXP ↗
File Size: 197.19 KB
Datasheet: MMRF5018HS-NXP.pdf
Description: RF Power GaN Transistor

Features

* Advanced GaN on SiC, offering high power density
* Decade bandwidth performance
* Enhanced thermal resistance packaging
* Input matched for extended wideband performance

Applications

* This part is characterized and performance is guaranteed for applications operating in the 1
* 2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. Typical 450
* 2700 MHz Performance: VDD = 50 Vdc, TA = 25°C,

MMRF5018HS Distributors

📁 Related Datasheet

MMR901XA MMR902 MMR931XA

📌 All Tags

MMRF5018HS Power GaN Transistor NXP

NXP MMRF5018HS-like datasheet