MMRF5017HS Datasheet - NXP

MMRF5017HS RF Power GaN Transistor

NXP Semiconductors Technical Data RF Power GaN Transistor This 125 W RF power GaN transistor is capable of broadband operation from 30 to 2200 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and broadband RF applications. This part is characterized and performance is guaranteed for applications operating in the 30 to 2200 MHz band. There is no guarantee of performance when this part is used .

MMRF5017HS-NXP.pdf