MMRF5017HS Datasheet - NXP

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MMRF5017HS RF Power GaN Transistor

NXP Semiconductors Technical Data RF Power GaN Transistor This 125 W RF power GaN transistor is capable of broadband operation from 30 to 2200 MHz a.

MMRF5017HS-NXP.pdf

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Datasheet Details

Part number:

MMRF5017HS

Manufacturer:

NXP ↗

File Size:

170.30 KB

Description:

RF Power GaN Transistor

Applications

* This part is characterized and performance is guaranteed for applications operating in the 30 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. Typical Performance: VDD = 50 Vdc, TA = 25C Frequency (MHz) Signal T

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