Datasheet Specifications
- Part number
- MMRF5017HS
- Manufacturer
- NXP ↗
- File Size
- 170.30 KB
- Datasheet
- MMRF5017HS-NXP.pdf
- Description
- RF Power GaN Transistor
Description
NXP Semiconductors Technical Data RF Power GaN Transistor This 125 W RF power GaN transistor is capable of broadband operation from 30 to 2200 MHz a.
Applications
* This part is characterized and performance is guaranteed for applications operating in the 30 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. Typical Performance: VDD = 50 Vdc, TA = 25C Frequency (MHz) Signal TMMRF5017HS Distributors
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