MMRF1312H - RF Power LDMOS Transistors

NXP

Datasheet Details

Internally input and output matched for broadband operation and ease of use.
Device can be used in a single--ended, push--pull or quadrature configuration.
Qualified up to a maximum of 52 VDD operation.
High ruggedness, handles > 20:1 VSWR.
Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing.
Characterized with series equivalent large--signal impedance parameters Typical.

📁 MMRF1312H Similar Datasheet

Other Datasheets by NXP

Published: Nov 30, 2024 |