* Internally input and output matched for broadband operation and ease of use
* Device can be used in a single
* ended, push
* pull or quadrature configuration
* Qualified up to a maximum of 52 VDD operation
* High ruggedness, handles > 20:1 VSWR
* Integrated ESD prot
MMRF1312H Datasheet (422.79 KB)
MMRF1312H
422.79 KB
Rf power ldmos transistors.
Freescale Semiconductor Technical Data
Document Number: MMRF1312H Rev. 0, 3/2016
RF Power LDMOS Transistors
High Ruggedness N
*Channel Enhanc.
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