MMRF1312H Datasheet - NXP

MMRF1312H RF Power LDMOS Transistors

Freescale Semiconductor Technical Data Document Number: MMRF1312H Rev. 0, 3/2016 RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These RF power devices are designed for pulse applications operating at frequencies from 900 to 1215 MHz. The devices are suitable for use in pulse applications with large duty cycles and long pulses and are ideal for use in high power military and commercial L Band radar applications such as IFF and DME/.

MMRF1312H Features

* Internally input and output matched for broadband operation and ease of use

* Device can be used in a single

* ended, push

* pull or quadrature configuration

* Qualified up to a maximum of 52 VDD operation

* High ruggedness, handles > 20:1 VSWR

* Integrated ESD prot

MMRF1312H-NXP.pdf