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MMRF1312GS

RF Power LDMOS Transistors

MMRF1312GS Features

* Internally input and output matched for broadband operation and ease of use

* Device can be used in a single

* ended, push

* pull or quadrature configuration

* Qualified up to a maximum of 52 VDD operation

* High ruggedness, handles > 20:1 VSWR

* Integrated ESD prot

MMRF1312GS Datasheet (422.79 KB)

Preview of MMRF1312GS PDF

Datasheet Details

Part number:

MMRF1312GS

Manufacturer:

NXP ↗

File Size:

422.79 KB

Description:

Rf power ldmos transistors.
Freescale Semiconductor Technical Data Document Number: MMRF1312H Rev. 0, 3/2016 RF Power LDMOS Transistors High Ruggedness N

*Channel Enhanc.

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MMRF1312GS Power LDMOS Transistors NXP

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