Datasheet Specifications
- Part number
- PBSS4160PANP
- Manufacturer
- NXP ↗
- File Size
- 383.53 KB
- Datasheet
- PBSS4160PANP_NXP.pdf
- Description
- NPN/NPN transistor
Description
DF N2 020 -6 PBSS4160PANP 14 January 2013 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1.General .Features
* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q1Applications
* Load switch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM TR1 (NPN) RCEsat collector-emitter saturation resistance IC = 0.5 A; IB = 50 mA; pulsed; tpPBSS4160PANP Distributors
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