* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadl
PBSS4330PA Datasheet (190.37 KB)
PBSS4330PA
190.37 KB
3 a npn low vcesat (biss) transistor.
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PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
Rev. 01
* 19 April 2010 Product data sheet
1. Product profile
1.1 .
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