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PBSS4350S

50 V low VCEsat NPN transistor

PBSS4350S Features

* High power dissipation (830 mW)

* Ultra low collector-emitter saturation voltage

* 3 A continuous current

* High current switching

* Improved device reliability due to reduced heat generation APPLICATIONS

* Medium power switching and muting

PBSS4350S General Description

NPN low VCEsat transistor in a SOT54 plastic package. PNP complement: PBSS5350S. MARKING TYPE NUMBER PBSS4350S MARKING CODE S4350S Fig.1 1 handbook, halfpage PBSS4350S QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter vol.

PBSS4350S Datasheet (79.01 KB)

Preview of PBSS4350S PDF

Datasheet Details

Part number:

PBSS4350S

Manufacturer:

NXP ↗

File Size:

79.01 KB

Description:

50 v low vcesat npn transistor.
DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS4350S 50 V low VCEsat NPN transistor Product speciļ¬cation 2001 Nov 19 Philips Semiconductors.

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TAGS

PBSS4350S low VCEsat NPN transistor NXP

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