Datasheet Details
Part number:
PBSS4350S
Manufacturer:
File Size:
79.01 KB
Description:
50 V low VCEsat NPN transistor
Features
* High power dissipation (830 mW)
* Ultra low collector-emitter saturation voltage
* 3 A continuous current
* High current switching
* Improved device reliability due to reduced heat generation APPLICATIONS
* Medium power switching and muting
PBSS4350S_PhilipsSemiconductors.pdf
PBSS4350S, 50 V low VCEsat NPN transistor
NPN low VCEsat transistor in a SOT54 plastic package.
PNP complement: PBSS5350S.
MARKING TYPE NUMBER PBSS4350S MARKING CODE S4350S Fig.1 1 handbook, halfpage PBSS4350S QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter vol
PBSS4350S Distributor
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