Datasheet Details
Part number:
PBSS4350T
Manufacturer:
File Size:
93.94 KB
Description:
NPN transistor
Features
* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
* High collector current capability
* High collector current gain
* Improved efficiency due to reduced heat generation. APPLICATIONS
* Power management applications
* Low a
PBSS4350T_PhilipsSemiconductors.pdf
PBSS4350T, NPN transistor
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS5350T.
MARKING TYPE NUMBER PBSS4350T MARKING CODE(1) ZC * Note 1.
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICRP collector-em
PBSS4350T Distributor
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