Datasheet4U Logo Datasheet4U.com

PBSS4350T

NPN transistor

PBSS4350T Features

* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat

* High collector current capability

* High collector current gain

* Improved efficiency due to reduced heat generation. APPLICATIONS

* Power management applications

* Low a

PBSS4350T General Description

NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5350T. MARKING TYPE NUMBER PBSS4350T MARKING CODE(1) ZC
* Note 1.
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICRP collector-em.

PBSS4350T Datasheet (93.94 KB)

Preview of PBSS4350T PDF

Datasheet Details

Part number:

PBSS4350T

Manufacturer:

NXP ↗

File Size:

93.94 KB

Description:

Npn transistor.
DISCRETE SEMICONDUCTORS DATA SHEET PBSS4350T 50 V; 3 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Jan 0.

📁 Related Datasheet

PBSS4350D NPN transistor (NXP)

PBSS4350S 50 V low VCEsat NPN transistor (NXP)

PBSS4350SPN 2.7A NPN/PNP Low VCEsat (BISS) Transistor (NXP)

PBSS4350SPN NPN/PNP transistor (nexperia)

PBSS4350SS transistor (NXP)

PBSS4350SS NPN/NPN transistor (nexperia)

PBSS4350T Silicon NPN transistor (BLUE ROCKET ELECTRONICS)

PBSS4350T NPN Transistors (Kexin)

PBSS4350X Silicon NPN transistor (BLUE ROCKET ELECTRONICS)

PBSS4350X transistor (NXP)

TAGS

PBSS4350T NPN transistor NXP

Image Gallery

PBSS4350T Datasheet Preview Page 2 PBSS4350T Datasheet Preview Page 3

PBSS4350T Distributor