PBSS4350T Datasheet - NXP

PBSS4350T NPN transistor

NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5350T. MARKING TYPE NUMBER PBSS4350T MARKING CODE(1) ZC * Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICRP collector-em.

PBSS4350T Features

* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat

* High collector current capability

* High collector current gain

* Improved efficiency due to reduced heat generation. APPLICATIONS

* Power management applications

* Low a

PBSS4350T_PhilipsSemiconductors.pdf