* I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I
PBSS4350SPN Datasheet (178.39 KB)
PBSS4350SPN
178.39 KB
2.7a npn/pnp low vcesat (biss) transistor.
PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 5 April 2007 www.datasheet4u.com Product data sheet 1. Product profile.
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