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PBSS4350SPN 2.7A NPN/PNP Low VCEsat (BISS) Transistor

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Description

PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Rev.01 * 5 April 2007 www.datasheet4u.com Product data sheet 1.Product profile.
NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

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Applications

* I I I I Complementary MOSFET driver Half and full bridge motor drivers Dual low power switches (e. g. motors, fans) Automotive 1.4 Quick reference data Table 2. Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = 2 A; IB = 200 mA [1] Symbol Parameter TR1; NPN low VCEsat transisto

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