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PBSS4360PAS 3A NPN transistor

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Description

DFN2020D-3 PBSS4360PAS 60 V, 3 A NPN low VCEsat (BISS) transistor 16 October 2015 Product data sheet 1.General .
NPN low VCEsat Breakthrough in a Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted De.

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Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation

Applications

* up to 175 °C
* Reduced Printed-Circuit Board (PCB) area requirements
* Leadless small SMD plastic package with soldarable side pads
* Exposed heat sink for excellent thermal and electrical conductivity
* Suitable for Automatic Optical Inspection (AOI) of solder joint

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