* I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I Compl
PBSS4350SPN Datasheet (695.72 KB)
PBSS4350SPN
695.72 KB
Npn/pnp transistor.
PBSS4350SPN
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor
Rev. 01
* 5 April 2007
Product data sheet
1. Product profile
1.1 General desc.
📁 Related Datasheet
PBSS4350SPN 2.7A NPN/PNP Low VCEsat (BISS) Transistor (NXP)
PBSS4350S 50 V low VCEsat NPN transistor (NXP)
PBSS4350SS transistor (NXP)
PBSS4350SS NPN/NPN transistor (nexperia)
PBSS4350D NPN transistor (NXP)
PBSS4350T NPN transistor (NXP)
PBSS4350T Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
PBSS4350T NPN Transistors (Kexin)
PBSS4350X Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
PBSS4350X transistor (NXP)
