PBSS5260QA PNP low VCEsat (BISS) transistor

NXP

Description

DF N1 01 PBSS5260QA 28 August 2013 0D -3 60 V, 1.7 A PNP low VCEsat (BISS) transistor Product data sheet 1.General .
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic pack.

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Datasheet Specifications

Part number: PBSS5260QA
Manufacturer: NXP ↗
File Size: 269.88 KB
Datasheet: PBSS5260QA_NXP.pdf
Description: PNP low VCEsat (BISS) transistor

Features

* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) ar

Applications

* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collec

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PBSS5260QA PNP low VCEsat BISS transistor NXP

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