PBSS5230QA Datasheet - NXP

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PBSS5230QA PNP low VCEsat (BISS) transistor

DF N1 01 PBSS5230QA 23 August 2013 0D -3 30 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet 1.General .
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic pack.

PBSS5230QA_NXP.pdf

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Datasheet Details

Part number:

PBSS5230QA

Manufacturer:

NXP ↗

File Size:

262.85 KB

Description:

PNP low VCEsat (BISS) transistor

Features

* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) ar

Applications

* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collec

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PBSS5230QA PNP low VCEsat BISS transistor NXP

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