* s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s
PBSS5220V Datasheet (141.86 KB)
PBSS5220V
141.86 KB
2a pnp low vcesat (biss) transistor.
PBSS5220V
20 V, 2 A PNP low VCEsat (BISS) transistor
Rev. 01
* 13 June 2005
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Product data sheet
1. Product profile
1.1 Ge.
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