PBSS5240V Datasheet - NXP

PBSS5240V 40 V low VCEsat PNP transistor

PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. NPN complement: PBSS4240V. 1 2 3 PBSS5240V QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitte.

PBSS5240V Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High collector current gain (hFE) at high IC

* High efficiency leading to reduced heat generation

* Reduced printed-circuit board area requirements. APPLICATIONS

PBSS5240V_PhilipsSemiconductors.pdf