Datasheet Details
- Part number
- PBSS5230QA
- Manufacturer
- nexperia ↗
- File Size
- 715.30 KB
- Datasheet
- PBSS5230QA-nexperia.pdf
- Description
- PNP Transistor
PBSS5230QA Description
PBSS5230QA 30 V, 2 A PNP low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1.General .
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic pack.
PBSS5230QA Features
* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* High energy efficiency due to less heat generation
* Reduced Printed-Circuit Board (PCB) area requirements
PBSS5230QA Applications
* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans)
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions
collector-emitter voltage
open base
co
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