PBSS5230T Datasheet - NXP

PBSS5230T PNP Transistor

PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER PBSS5230T Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. MARKING CODE(1) 3K * 1 Top view handbook, halfpage PBSS5230T QUICK REFERENCE .

PBSS5230T Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability: IC and ICM

* Higher efficiency leading to less heat generation

* Reduced printed-circuit board requirements

* Cost effective alternative to MOSFETs in specific applications.

PBSS5230T_PhilipsSemiconductors.pdf