PBSS5230T Datasheet (NXP) - PNP Transistor

PBSS5230T, PNP Transistor

PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters.

MARKING TYPE NUMBER PBSS5230T Note 1.

* = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

MARKING CODE(1) 3K * 1 Top view handbook, halfpage PBSS5230T QUICK REFERENCE

PBSS5230T Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability: IC and ICM

* Higher efficiency leading to less heat generation

* Reduced printed-circuit board requirements

* Cost effective alternative to MOSFETs in specific applications.