PESD5V0S1BA Datasheet - NXP

PESD5V0S1BA Low capacitance bidirectional ESD protection diodes

Top view 1 2 PESD5V0S1BA QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse standoff voltage diode capacitance; f = 1 MHz; VR = 0 V VALUE 5 35 UNIT V pF number of protected lines 1 PINNING PIN 1 2 anode 1 anode 2 DESCRIPTION 1 2 001aaa138 Low capacitance ESD protection diode in a very small.

PESD5V0S1BA Features

* Bi-directional ESD protection of one line

* Low diode capacitance

* Max. peak pulse power: Ppp = 130 W at tP = 8/20 µs

* Low clamping voltage: V(CL)R = 14 V at Ipp = 12 A

* Ultra low leakage current: IRM = 5 nA at VRWM = 5 V

* ESD protection 30 kV

PESD5V0S1BA_PhilipsSemiconductors.pdf