PESD5V0S1BA Low capacitance bidirectional ESD protection diodes

NXP

Description

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET PESD5V0S1BA Low capacitance bi-directional ESD protection diode in SOD323 Product speciﬁcati.
Top view 1 2 PESD5V0S1BA QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse standoff voltage diode capacitance; f = 1 MHz; VR = 0 V VALUE 5 35 UNI.

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Datasheet Specifications

Part number: PESD5V0S1BA
Manufacturer: NXP ↗
File Size: 117.71 KB
Datasheet: PESD5V0S1BA_PhilipsSemiconductors.pdf
Description: Low capacitance bidirectional ESD protection diodes

Features

* Bi-directional ESD protection of one line
* Low diode capacitance
* Max. peak pulse power: Ppp = 130 W at tP = 8/20 µs
* Low clamping voltage: V(CL)R = 14 V at Ipp = 12 A
* Ultra low leakage current: IRM = 5 nA at VRWM = 5 V
* ESD protection 30 kV

Applications

* Cellular handsets and accessories
* Portable electronics
* Computers and peripherals
* Communication systems

PESD5V0S1BA Distributors

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PESD5V0S1BA Low capacitance bidirectional ESD protection diodes NXP

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