PHE13003 Silicon Diffused Power Transistor

NXP

Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL .
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lightin.

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Datasheet Specifications

Part number: PHE13003
Manufacturer: NXP ↗
File Size: 49.87 KB
Datasheet: PHE13003_PhilipsSemiconductors.pdf
Description: Silicon Diffused Power Transistor

Applications

* converters and inverters, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipati

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PHE13003 Silicon Diffused Power Transistor NXP

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