PHE13007 Silicon Diffused Power Transistor

NXP

Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL .
The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applic.

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Datasheet Specifications

Part number: PHE13007
Manufacturer: NXP ↗
File Size: 132.71 KB
Datasheet: PHE13007_PhilipsSemiconductors.pdf
Description: Silicon Diffused Power Transistor

Applications

* converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO VEBO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Emitter-Base voltage (IB = 0) C

PHE13007 Distributors

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PHE13007 Silicon Diffused Power Transistor NXP

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