PHE13009 Silicon Diffused Power Transistor

NXP

Description

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL .
The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applic.

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Datasheet Specifications

Part number: PHE13009
Manufacturer: NXP ↗
File Size: 59.81 KB
Datasheet: PHE13009_PhilipsSemiconductors.pdf
Description: Silicon Diffused Power Transistor

Applications

* converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collec

PHE13009 Distributors

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PHE13009 Silicon Diffused Power Transistor NXP

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