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PHN70308 N-channel enhancement mode TrenchMOS transistor array

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Description

Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor array .
This product is used to drive high performance, three phase brushless d.

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Features

* 30 mΩ isolation transistor
* 80 mΩ spindle transistors
* TrenchMOS technology
* Logic level compatible
* Surface mount package D4 PHN70308 SYMBOL isolation FET S4 G4 QUICK REFERENCE DATA VDS = 25 V ID = 5 A RDS(ON) ≤ 30 mΩ G6 G5 S6 D2 S5 D3 G7 S7 D1 (VG

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