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PHP212L - Dual P-channel enhancement mode MOS transistor

Datasheet Summary

Description

Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Features

  • High-speed switching.
  • No secondary breakdown.
  • Very low on-state resistance.
  • Low threshold.

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Datasheet Details

Part number PHP212L
Manufacturer NXP
File Size 62.03 KB
Description Dual P-channel enhancement mode MOS transistor
Datasheet download datasheet PHP212L Datasheet
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET PHP212L Dual P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Objective specification Dual P-channel enhancement mode MOS transistor FEATURES • High-speed switching • No secondary breakdown • Very low on-state resistance • Low threshold. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification. DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
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