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PHP23NQ15T

N-channel TrenchMOS transistor

PHP23NQ15T Features

* ’Trench’ technology

* Low on-state resistance

* Fast switching

* Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 150 V ID = 23 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope us

PHP23NQ15T General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP23NQ15T is supplied in the SOT78 (TO220AB) conventio.

PHP23NQ15T Datasheet (99.05 KB)

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Preview of PHP23NQ15T PDF

Datasheet Details

Part number:

PHP23NQ15T

Manufacturer:

NXP ↗

File Size:

99.05 KB

Description:

N-channel trenchmos transistor.

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TAGS

PHP23NQ15T N-channel TrenchMOS transistor NXP

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