PHP2N60 - PowerMOS transistor
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance.
Intended for use in Switched Mode Power Supplies (SMPS), motor
Philips Semiconductors Product specification
PHP2N60 Features
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* 5 ID, Drain current (Amps) VDS = 30 V PHP2N60 Tj = 25 C 4 VGS(TO) / V max. 4 3 typ. 3 Tj = 150 C 2 min. 2 1 1 0 0 0 2 4 6 VGS, Gate-Source voltage (Volts) 8 10 -60 -40 -20 0 20 40 60 Tj / C 80 100 120 140 Fig.7. Ty
