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PHP2N60 PowerMOS transistor

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Description

Philips Semiconductors Product specification * * * * * * * * * * * .
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteri.

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Features

* br>
* 5 ID, Drain current (Amps) VDS = 30 V PHP2N60 Tj = 25 C 4 VGS(TO) / V max. 4 3 typ. 3 Tj = 150 C 2 min. 2 1 1 0 0 0 2 4 6 VGS, Gate-Source voltage (Volts) 8 10 -60 -40 -20 0 20 40 60 Tj / C 80 100 120 140 Fig.7. Ty

Applications

* QUICK REFERENCE DATA SYMBOL
* -VDS ID Ptot RDS(ON) PARAMETER MAX. UNIT

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