PMDXB1200UPE Datasheet - NXP

PMDXB1200UPE, dual P-channel Trench MOSFET

DFN1010B- 6 PMDXB1200UPE 30 V, dual P-channel Trench MOSFET 25 March 2015 Product data sheet 1.General .
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic pack.

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PMDXB1200UPE-NXP.pdf

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Datasheet Details

Part number:

PMDXB1200UPE

Manufacturer:

NXP ↗

File Size:

230.89 KB

Description:

dual P-channel Trench MOSFET

Features

* Low threshold voltage
* Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current

PMDXB1200UPE Distributors

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PMDXB1200UPE dual P-channel Trench MOSFET NXP

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