PMDXB950UPEL - dual P-channel MOSFET

nexperia

PMDXB950UPEL Datasheet Preview — Preview of PMDXB950UPEL PDF

Datasheet Details

Part number	PMDXB950UPEL
Manufacturer	nexperia ↗
File Size	732.80 KB
Description	dual P-channel MOSFET
Datasheet	PMDXB950UPEL-nexperia.pdf

PMDXB950UPEL Product details

Description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Low leakage current.
Trench MOSFET technology.
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
Exposed drain pad for excellent thermal conduction.
ElectroStatic Discharge (ESD) protection > 1 kV HBM.
Drain-source on-state resistance RDSon = 1.02 Ω 3.

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Published: Jul 28, 2019 |