PMDXB950UPE Datasheet - NXP

PMDXB950UPE, dual P-channel Trench MOSFET

DF N1 0 PMDXB950UPE 10 September 2013 10B -6 20 V, dual P-channel Trench MOSFET Product data sheet 1.General .
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic pack.

datasheet Preview Page 1 from Datasheet4u.com

PMDXB950UPE_NXP.pdf

PMDXB950UPE Datasheet Preview — Preview of PMDXB950UPE PDF

Datasheet Details

Part number:

PMDXB950UPE

Manufacturer:

NXP ↗

File Size:

274.18 KB

Description:

dual P-channel Trench MOSFET

Features

* Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02

Applications

* Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -500 mA;

PMDXB950UPE Distributors

📁 Related Datasheet

PMDXB950UPEL PMDXB600UNEL PMD02N60N PMD03N80R PMD04N65M PMD05N50M

📌 All Tags

PMDXB950UPE dual P-channel Trench MOSFET NXP

NXP PMDXB950UPE-like datasheet