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PMDXB950UPE

dual P-channel Trench MOSFET

PMDXB950UPE Features

* Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02

PMDXB950UPE Datasheet (274.18 KB)

Preview of PMDXB950UPE PDF

Datasheet Details

Part number:

PMDXB950UPE

Manufacturer:

NXP ↗

File Size:

274.18 KB

Description:

Dual p-channel trench mosfet.

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TAGS

PMDXB950UPE dual P-channel Trench MOSFET NXP

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