PMDXB950UPE dual P-channel Trench MOSFET

NXP

Description

DF N1 0 PMDXB950UPE 10 September 2013 10B -6 20 V, dual P-channel Trench MOSFET Product data sheet 1.General .
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic pack.

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Datasheet Specifications

Part number: PMDXB950UPE
Manufacturer: NXP ↗
File Size: 274.18 KB
Datasheet: PMDXB950UPE_NXP.pdf
Description: dual P-channel Trench MOSFET

Features

* Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02

Applications

* Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -500 mA;

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PMDXB950UPE dual P-channel Trench MOSFET NXP

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