PMDXB600UNE Datasheet - NXP

PMDXB600UNE, dual N-channel Trench MOSFET

DF N1 0 PMDXB600UNE 16 September 2013 10B -6 20 V, dual N-channel Trench MOSFET Product data sheet 1.General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic pack.

datasheet Preview Page 1 from Datasheet4u.com

PMDXB600UNE_NXP.pdf

PMDXB600UNE Datasheet Preview — Preview of PMDXB600UNE PDF

Datasheet Details

Part number:

PMDXB600UNE

Manufacturer:

NXP ↗

File Size:

276.26 KB

Description:

dual N-channel Trench MOSFET

Features

* Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470

Applications

* Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 600 mA; Tj =

PMDXB600UNE Distributors

📁 Related Datasheet

PMDXB600UNEL PMDXB950UPEL PMD02N60N PMD03N80R PMD04N65M PMD05N50M

📌 All Tags

PMDXB600UNE dual N-channel Trench MOSFET NXP

NXP PMDXB600UNE-like datasheet