PMDXB600UNE - dual N-channel Trench MOSFET

NXP

PMDXB600UNE Datasheet Preview — Preview of PMDXB600UNE PDF

Datasheet Details

Part number	PMDXB600UNE
Manufacturer	NXP ↗
File Size	276.26 KB
Description	dual N-channel Trench MOSFET
Datasheet	PMDXB600UNE_NXP.pdf

PMDXB600UNE Product details

Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ 3.

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Published: Nov 11, 2013 |